Non-volatile resistive switching mechanism in single-layer MoS<sub>2</sub> memristors: Insights from ab initio modelling of Au and MoS<sub>2</sub> interfaces
نویسندگان
چکیده
The migration of Au atoms to fill the S vacancies in MoS 2 memristors increases electron injection rate and reduces contact resistance at metal–semiconductor interface, thus causing resistive switch.
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ژورنال
عنوان ژورنال: Nanoscale advances
سال: 2023
ISSN: ['2516-0230']
DOI: https://doi.org/10.1039/d3na00045a